Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
US8404512B1 · kind B1 · utility
5Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Mar 4, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.