Method of manufacturing thin film transistor
US8404529B2 · kind B2 · utility
2Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Mar 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
Abstract
A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.