Transferred thin film transistor and method for manufacturing the same
US8404532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.