Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method
US8404548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jul 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.