Manufacturing method of semiconductor device
US8404567B2 · kind B2 · utility
1Cited by
5References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | May 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device, includes: forming grooves from a first surface side of a semiconductor wafer; separating plural chip areas into pieces by grinding a second surface of the semiconductor wafer after a protection sheet is attached to the first surface of the semiconductor wafer; attaching a laminated film in which a dicing film and an adhesive film are sequentially laminated on a supporting film composed of a resin film with high modulus of elasticity to the second surface of the semiconductor wafer; and cutting the adhesive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.