Scintillator and detector assembly including a single photon avalanche diode and a device of a quenching circuit having a same wide band-gap semiconductor material
US8405020B2 · kind B2 · utility
25Cited by
11References
20Claims
0Family size
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Inventor
Key dates
| Filing date | May 24, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jun 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T7/005
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A detector comprising a photodetector including a single photon avalanche diode (SPAD), wherein the SPAD comprises a wide band-gap semiconductor material, and a quenching circuit electrically coupled to the photodetector comprising a first device, wherein the first device comprises a wide band-gap semiconductor material having a band-gap of at least about 1.7 eV at about 26° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.