Nitride semiconductor device
US8405064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Oct 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1):LC1<LC2<LC3 (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.