Printable thin-film transistors with high dielectric constant gate insulators and methods for producing same

US8405069B2 · kind B2 · utility

Assignee

• Georgia Tech Research Corporation · US

Inventors

• Bernard Kippelen · Tucson, US
• Joseph W. Perry · La Habra, US
• Seth Marder · Atlanta, US
• Philoseok Kim · Arlington, US
• Simon C. Jones · Whittier, US
• Joshua N. Haddock · Roanoke, US
• Xiaohong Zhang · Beijing, CN
• Benoit Domercq · Atlanta, US
• Peter Hotchkiss · Albuquerque, US

Key dates

• Filing date: Nov 13, 2007
• Grant date: Mar 26, 2013
• Expiry date: Aug 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/478

Abstract

Disclosed are embodiments of organic thin-film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands and methods of fabricating such OTFTs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.