Organic thin film transistor with a protective layer between source and drain electrodes and electronic device
US8405073B2 · kind B2 · utility
4Cited by
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5Claims
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Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/80
Abstract
A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.