Thin film transistor and organic light emitting diode display device
US8405088B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Apr 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.