Patent · US Active

Light emitting device, and lighting apparatus

US8405102B2 · kind B2 · utility

2Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 8, 2011
Grant dateMar 26, 2013
Priority date
Expiry dateJun 15, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002

Abstract

Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. Thereby, brightness of the light emitting device is improved through effective diffusion of current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.