Light-emitting device

US8405106B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Tzu-Chieh Hsu · Hsinchu, TW
• Ching-San Tao · Hsinchu, TW
• Chen Ou · Hsinchu, TW
• Min-Hsun Hsieh · Hsinchu, TW
• Chao-Hsing Chen · Tainan, TW

Key dates

• Filing date: Apr 2, 2010
• Grant date: Mar 26, 2013
• Expiry date: Apr 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.