Light sensor using wafer-level packaging
US8405115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2009 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Feb 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides systems, devices and methods for fabricating miniature low-power light sensors. With the present invention, a light sensitive component, such as a diode, is fabricated on the front side of a silicon wafer. Connectivity from the front side of the wafer to the back side of the wafer is provided by a through silicon via. Solder bumps are then placed on the back side of the wafer to provide coupling to a printed circuit board. The techniques described in the present invention may also be applied to other types of semiconductor devices, such as light-emitting diodes, image sensors, pressure sensors, and flow sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.