Semiconductor device and method for producing the same
US8405125B2 · kind B2 · utility
1Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jan 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.