Dielectric layer for flash memory device and method for manufacturing thereof
US8405166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is related to a dielectric layer comprising a rare-earth aluminate (RExAl2-xO3 with 0<x<2) and having a perovskite crystalline structure, wherein the rare-earth aluminate comprises a rare-earth element having an atomic number higher than or equal to 63 and lower than or equal to 71. The disclosure also relates to method of manufacturing of a dielectric stack and a dielectric stack comprising said rare-earth aluminate dielectric layer and further comprising a template stack comprising at least an upper template layer, wherein the upper template layer has a perovskite structure, and wherein the upper template layer is underlying and in contact with the rare-earth aluminate dielectric layer. In a preferred embodiment the dielectric stack further comprises a lower template layer having a crystalline structure, wherein the lower template layer is underlying and in contact with the upper template layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.