Solid-state image sensing device
US8405179B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Sep 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80377
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device comprises a plurality of pixels that includes a photoelectric conversion portion, a charge-voltage converter that receives the charge and converts the charge to a voltage, an amplifier that outputs a signal corresponding to a potential of the charge-voltage converter, a transfer portion that transfers a charge from the photoelectric conversion portion to the charge-voltage converter, and a reset transistor that resets a potential of the charge-voltage converter; a connection transistor that connects or disconnects the charge-voltage converter of at least one of the pixels and the charge-voltage converter of at least one of the other pixels. A threshold voltage of the connection transistor is higher than a threshold voltage of the reset transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.