Trench schottky diode and method for manufacturing the same
US8405184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Nov 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.