Component having a silicon carbide coated via
US8405190B2 · kind B2 · utility
0Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2009 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Oct 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A component including a via for electrical connection between a first and a second plane of a substrate is provided. The substrate has a borehole having an inner wall that is coated with a conductive layer made of an electrically conductive material, an intermediate layer being disposed between the inner wall and the conductive layer. The intermediate layer includes electrically insulating SiC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.