Patent · US Active

Component having a silicon carbide coated via

US8405190B2 · kind B2 · utility

0Cited by
13References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 20, 2009
Grant dateMar 26, 2013
Priority date
Expiry dateOct 20, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A component including a via for electrical connection between a first and a second plane of a substrate is provided. The substrate has a borehole having an inner wall that is coated with a conductive layer made of an electrically conductive material, an intermediate layer being disposed between the inner wall and the conductive layer. The intermediate layer includes electrically insulating SiC.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.