Semiconductor device
US8406038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2011 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Sep 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.