Method of producing a sputter target material
US8409498B2 · kind B2 · utility
2Cited by
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6Claims
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Key dates
| Filing date | Jun 5, 2009 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Nov 12, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2998/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sputter target material which is of a sintered material, wherein the sputter target material consists of 0.5 to 50 atomic % in total of at least one metal element (M) selected from the group of Ti, Zr, V, Nb and Cr, and the balance of Mo and unavoidable impurities, and has a microstructure seen at a perpendicular cross section to a sputtering surface, in which microstructure oxide particles exist near a boundary of each island of the metal element (M), and wherein the maximum area of the island, which is defined by connecting the oxide particles with linear lines so as to form a closed zone, is not more than 1.0 mm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.