Method of manufacturing semiconductor light emitting device
US8409896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Nov 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.