Methods of embedding thin-film capacitors into semiconductor packages using temporary carrier layers
US8409963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Oct 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/104
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods of making a semiconductor package comprising at least one thin-film capacitor embedded into at least one build-up layer of said semiconductor package. A thin-film capacitor is provided wherein the thin-film capacitor has a first electrode and a second electrode separated by a dielectric. A temporary carrier layer is applied to the first electrode and the second electrode is patterned. A PWB core and a build-up material are provided, and the build-up material is placed between the PWB core and the patterned second electrode of said thin-film capacitor. The patterned electrode side of the thin-film capacitor is laminated to the PWB core by way of the build-up material, the temporary carrier layer is removed, and the first electrode is patterned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.