Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer
US8410355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2008 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Dec 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.