Patent · US Active

Light-emitting diode having a reflective layer between a transparent insulating layer and an electrode

US8410505B2 · kind B2 · utility

2Cited by

0References

7Claims

0Family size

Assignee

Chi Mei Lighting Technology Corp. · TW

Inventors

Changhsin Chu · Danei, TW
Kuohui Yu · Tainan, TW

Key dates

Filing date	Mar 28, 2011
Grant date	Apr 2, 2013
Priority date	—
Expiry date	Jul 12, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/857

Abstract

A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure includes a substrate, an illuminant epitaxial structure, first conductivity type and second conductivity type contact layers, a transparent insulating layer, first and second reflective layers, first and second barrier layers, and first conductivity type and second conductivity type electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.