Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys
US8410523B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Dec 10, 2008 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Jun 14, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.