Integrated microelectronic device with through-vias
US8410574B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Nov 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone (2) in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side and the first side, the via being electrically isolated from the substrate by an insulating layer. A buffer zone is situated between the insulating layer and the doped active zone. This buffer zone is positioned under a shallow trench isolation zone provided around the doped active zone. The buffer zone functions to reduce the electrical coupling between the through silicon via and the doped active zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.