Semiconductor device with protecting film and method of fabricating the semiconductor device with protecting film
US8410600B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 7, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Jan 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.