Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system
US8411187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | May 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
Abstract
A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.