Method for fabricating a structure for a microelectric device
US8413317B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.