Patent · US Active

Plasma processing apparatus

US8414702B2 · kind B2 · utility

0Cited by
14References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateApr 7, 2011
Grant dateApr 9, 2013
Priority date
Expiry dateMay 10, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32458
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.