Plasma deposition of a thin film
US8414985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Apr 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The method of manufacturing a thin film includes introducing a process gas in a reaction chamber of a plasma deposition device, the reaction chamber including a first electrode and a second electrode. The method further includes applying, by a first power supply unit, a first pulsed RF signal to one of the first and second electrodes, and applying, by a second power supply unit, a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are applied based on a predetermined deposition variable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.