Method for manufacturing nitride semiconductor laser element
US8415188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2011 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Sep 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined by the first protective film and the conductive layer at least on the ridge base portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.