Production method of thin film transistor using amorphous oxide semiconductor film
US8415198B2 · kind B2 · utility
144Cited by
35References
15Claims
0Family size
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Key dates
| Filing date | Jul 26, 2007 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jul 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
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