Semiconductor device and peeling off method and method of manufacturing semiconductor device
US8415208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Feb 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.