Method for removing dummy poly in a gate last process
US8415254B2 · kind B2 · utility
17Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2008 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Feb 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for fabricating a semiconductor device. The method includes removing a silicon material from a gate structure located on a substrate through a cycle including: etching the silicon material to remove a portion thereof, where the substrate is spun at a spin rate, applying a cleaning agent to the substrate, and drying the substrate; and repeating the cycle, where a subsequent cycle includes a subsequent spin rate for spinning the substrate during the etching and where the subsequent spin rate does not exceed the spin rate of the previous cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.