Dimensional silica-based porous silicon structures and methods of fabrication
US8415555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2011 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | May 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249969
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating dimensional silica-based substrates or structures comprising a porous silicon layers are contemplated. According to one embodiment, oxygen is extracted from the atomic elemental composition of a silica glass substrate by reacting a metallic gas with the substrate in a heated inert atmosphere to form a metal-oxygen complex along a surface of the substrate. The metal-oxygen complex is removed from the surface of the silica glass substrate to yield a crystalline porous silicon surface portion and one or more additional layers are formed over the crystalline porous silicon surface portion of the silica glass substrate to yield a dimensional silica-based substrate or structure comprising the porous silicon layer. Embodiments are also contemplated where the substrate is glass-based, but is not necessarily a silica-based glass substrate. Additional embodiments are disclosed and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.