Method for forming copper indium gallium chalcogenide layer with shaped gallium profile
US8415559B2 · kind B2 · utility
6Cited by
7References
4Claims
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Key dates
| Filing date | Mar 30, 2009 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Apr 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
Abstract
Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.
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