Infrared imaging element
US8415622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.