Semiconductor device including diode

US8415747B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Günter Eckel · Rostock, DE
• Jorg Schumann · Erlangen, DE

Key dates

• Filing date: Dec 28, 2010
• Grant date: Apr 9, 2013
• Expiry date: Jun 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.