Patent · US Active

Micro device transfer head with silicon electrode

US8415771B1 · kind B1 · utility

101Cited by
43References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 2012
Grant dateApr 9, 2013
Priority date—
Expiry dateMay 25, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/7598
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.