Nonvolatile memory device
US8416603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Oct 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, a nonvolatile memory device includes a first conductive member and a second conductive member. The first conductive member extends in a first direction. The second conductive member extends in a second direction intersecting the first direction. A portion of the first conductive member connected to the second conductive member protrudes toward the second conductive member. A resistivity of the first conductive member in the first direction is lower than a resistivity of the first conductive member in a third direction of the protrusion of the first conductive member. A resistance value of the first conductive member in the third direction changes. A resistivity of the second conductive member in the second direction is lower than a resistivity of the second conductive member in the third direction. A resistance value of the second conductive member in the third direction changes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.