Spin-transfer torque memory non-destructive self-reference read method
US8416614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2012 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.