Growth method of Fe3N material
US8420407B2 · kind B2 · utility
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Key dates
| Filing date | May 3, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A kind of growth method of Fe3Nin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.