Method for fabricating a GaN-based thin film transistor
US8420421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.