Method of forming active region structure
US8420453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Apr 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an active region structure includes preparing a semiconductor substrate including a cell array region and a peripheral circuit region, forming preliminary cell active regions in the cell array region of the semiconductor substrate, and forming cell active regions in the preliminary cell active regions and at least one peripheral active region in the peripheral circuit region of the semiconductor substrate, such that the preliminary cell active regions, the cell active regions, and the at least one peripheral active region are integrally formed with the semiconductor substrate and protrude from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.