Method of manufacturing for thin film transistor
US8420456B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2008 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An object is to provide a semiconductor device with improved reliability in which a defect stemming from an end portion of a semiconductor layer provided in an island shape is prevented, and a manufacturing method thereof. Over a substrate having an insulating surface, an island-shaped semiconductor layer is formed, a first alteration treatment is performed, a first insulating film is formed on a surface of the island-shaped semiconductor layer, the first insulating film is removed, a second alteration treatment is performed on the island-shaped semiconductor from which the first insulating film is removed, a second insulating film is formed on a surface of the island-shaped semiconductor layer, and a conductive layer is formed over the second insulating film. An upper end portion of the island-shaped semiconductor layer has curvature by the first alteration treatment and the second alteration treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.