Nonvolatile memory device and method of forming the same
US8420482B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Jul 21, 2009 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Mar 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device and a method of forming the nonvolatile memory device, the method including forming a tunnel insulating layer on a substrate, wherein forming the tunnel insulating layer includes forming a multi-element insulating layer by a process including sequentially supplying a first element source, a second element source, and a third element source to the substrate, forming a charge storage layer on the tunnel insulating layer, forming a blocking insulating layer on the charge storage layer, and forming a control gate electrode on the blocking insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.