Transverse force, pressure and vibration sensors using piezoelectric nanostructures
US8421052B2 · kind B2 · utility
1Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/205
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.