Light emitting diode structure having superlattice with reduced electron kinetic energy therein
US8421058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2009 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Nov 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure includes a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer including the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.