Semiconductor device and manufacturing method thereof
US8421068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Dec 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/07
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.